DocumentCode
2927819
Title
High-performance nMOSFET with in-situ phosphorus-doped embedded Si:C (ISPD eSi:C) source-drain stressor
Author
yang, Bo ; Takalkar, R. ; Ren, Zhang ; Black, L. ; Dube, A. ; Weijtmans, J.W. ; Li, Jie ; Johnson, J.B. ; Faltermeier, J. ; Madan, A. ; ZHU, Z. Q. ; Turansky, A. ; Xia, Guangrui ; Chakravarti, A. ; Pal, Ravindra ; Chan, Kap Luk ; Reznicek, Alexander ; Ada
Author_Institution
Adv. Micro Devices, Hopewell Junction, NY
fYear
2008
fDate
15-17 Dec. 2008
Firstpage
1
Lastpage
4
Abstract
For the first time, embedded Si:C (eSi:C) was demonstrated to be a superior nMOSFET stressor compared to SMT or tensile liner (TL) stressors. eSi:C nMOSFET showed higher channel mobility and drive current over our best poly-gate 45 nm-node nMOSFET with SMT and tensile liner stressors. In addition, eSi:C showed better scalability than SMT plus tensile liner stressors from 380 nm to 190 nm poly-pitches.
Keywords
MOSFET; carbon; elemental semiconductors; phosphorus; semiconductor doping; silicon; Si:C,P; channel mobility; in-situ phosphorus-doped embedded Si:C; nMOSFET; size 45 nm; source-drain stressor; tensile liner stressor; MOSFET circuits;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location
San Francisco, CA
ISSN
8164-2284
Print_ISBN
978-1-4244-2377-4
Electronic_ISBN
8164-2284
Type
conf
DOI
10.1109/IEDM.2008.4796611
Filename
4796611
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