(110) NMOSFETs competitive to (001) NMOSFETs: Si migration to create (331) facet and ultra-shallow Al implantation after NiSi formation

Author

Fukutome, H. ; Okabe, K. ; Okubo, K. ; Minakata, H. ; Morisaki, Y. ; Ikeda, K. ; Yamamoto, T. ; Hosaka, K. ; Momiyama, Y. ; Kase, M. ; Satoh, S.

Author_Institution

Fujitsu Labs. Ltd., Akiruno

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

We demonstrated for the first time the device performance of (110) nMOSFETs featuring a Si migration process, resulting in better mobility and modified shape of the narrow active region, and ultra-shallow Al implantation after nickel silicide (NiSi) formation, resulting in reduced parasitic resistance. We found that these processes made the performance of (110) nMOSFETs competitive with that of (001) nMOSFETs while maintaining their 40% advantage in pMOSFET performance.

Keywords

MOSFET; aluminium; electrical resistivity; elemental semiconductors; ion implantation; nickel compounds; silicon; NiSi:Al; Si; migration; mobility; nMOSFETs; pMOSFET; parasitic resistance; ultra-shallow implantation; Capacitive sensors; Degradation; Electric resistance; Electric variables; Electron mobility; MOSFET circuits; Rough surfaces; Silicides; Surface resistance; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796613

Filename

4796613