High performance oxide thin film transistors with double active layers

Author

Kim, Sun Il ; Kim, Chang Jung ; Park, Jae Chul ; Song, Ihun ; Kim, Sang Wook ; Yin, Huaxiang ; Lee, Eunha ; Lee, Jae Chul ; Park, Youngsoo

Author_Institution

Semicond. Lab., Yongin

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

We successfully integrated the high performance oxide thin film transistors with double active layers. The active layer is composed of IZO (or ITO) and GIZO layers. The TFT with ITO/GIZO double active layer shows a high mobility of 104 cm²/V.sec, the acceptable threshold voltage of about 0.5 V and the low Vth shift less than 1 V under voltage stress. These are very promising results for applications in driving large area AMOLED and AMLCD display.

Keywords

gallium compounds; indium compounds; semiconductor materials; thin film transistors; AMLCD display; AMOLED display; ITO layers; ITO-GIZO layers; ITO-GaInZnO; IZO layers; IZO-GIZO layers; InZnO-GaInZnO; double active layers; mobility; oxide thin film transistors; threshold voltage; Dry etching; Flat panel displays; Indium tin oxide; Plasma applications; Plasma chemistry; Plasma temperature; Stability; Stress; Thin film transistors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796617

Filename

4796617