Amorphous silicon thin-film transistors with DC saturation current half-life of more than 100 years

Author

Hekmatshoar, Bahman ; Cherenack, Kunigunde H. ; Wagner, Sigurd ; Sturm, James C.

Author_Institution

Dept. of Electr. Eng., Princeton Univ., Princeton, NJ

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

We report amorphous silicon thin film transistors (a-Si TFT´s) with an extrapolated DC saturation current half-life of more than 100 years, an improvement of over 1000 times compared to the previous art (1-4). This TFT half-life is higher than the luminance half-life of high-quality green phosphorescent OLED´s, showing that the TFT´s are promising for driving OLED´s in active-matrix OLED displays.

Keywords

LED displays; amorphous semiconductors; driver circuits; elemental semiconductors; organic light emitting diodes; phosphorescence; semiconductor thin films; silicon; thin film transistors; DC saturation current half-life extrapolation; Si; TFT half-life; active-matrix OLED display driver; amorphous silicon thin-film transistor; Active matrix organic light emitting diodes; Active matrix technology; Amorphous silicon; Business continuity; Electron traps; Organic light emitting diodes; Plasma temperature; Stress; Thin film transistors; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796621

Filename

4796621