A comprehensive and comparative study of interface and bulk characteristics of nMOSETs with la-incorporated high-k dielectrics

Author

Won-Ho Choi ; Hyuk-Min Kwon ; In-Shik Han ; Tae-Gyu Goo ; Min-Ki Na ; Chang Yong Kang ; Gennadi Bersuker ; Byoung Hun Lee ; Yoon-Ha Jeong ; Hi-Deok Lee ; Jammy, R.

Author_Institution

SEMATECH, Austin, TX

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

Reported herein is a comprehensive and comparative study on NMOSFETs with HfLaSiON and HfLaON gate dielectric with an equivalent oxide thickness (EOT) of 0.9 nm (T_inv~1.2 nm). Digital and analog performances as well as reliability characteristics are compared in detail. It is shown that HfLaSiON has a strong relationship with the interface characteristics due to low barrier height, while HfLaON with the bulk trap characteristics due to greater bulk trap density.

Keywords

MOSFET; hafnium compounds; lanthanum compounds; semiconductor device reliability; silicon compounds; HfLaON; HfLaSiON; barrier height; bulk trap density; equivalent oxide thickness; gate dielectric; high-k dielectrics; interface characteristics; nMOSET; reliability characteristics; size 0.9 nm; 1f noise; Annealing; Degradation; Dielectric devices; Dielectric substrates; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Jamming; MOSFETs;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796627

Filename

4796627