Distortion properties of MESFET and PIN diode microwave switches

Author

Caverley, R.H. ; Hiller, G.

Author_Institution

Dept. of Electr. & Comput. Eng., Massachussetts Univ., Dartmouth, MA, USA

fYear

1992

fDate

1-5 June 1992

Firstpage

533

Abstract

The authors present a comparison of the distortion properties of microwave switches that employ PIN diodes or GaAs MESFET semiconductor devices. They analyzed the distortion properties of both devices in a typical switch application. The results of the analysis indicated that either device is capable of performing with a third-order intercept point at approximately 40 dBm or better at frequencies from 10 MHz through beyond the X-band. This level of distortion is generally satisfactory for many small signal applications. If better distortion performance is required, the PIN diode is superior.<>

Keywords

Schottky gate field effect transistors; electric distortion; p-i-n diodes; semiconductor switches; solid-state microwave devices; 10 MHz to 10 GHz; GaAs; MESFET; PIN diode; X-band; distortion properties; intercept point; microwave switches; semiconductor devices; Circuits; Cutoff frequency; Design engineering; Gallium arsenide; MESFETs; Microwave devices; Nonlinear distortion; Power semiconductor switches; Semiconductor devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.188035

Filename

188035