Title :
Phase distortion mechanism of a GaAs FET power amplifier for digital cellular application
Author :
Ikeda, H. ; Ishizaki, T. ; Yoshikawa, Y. ; Uwano, T. ; Kanazawa, K.
Author_Institution :
Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
Abstract :
A conventional class AB amplifier with high efficiency has phase distortion which is not suitable for a pi /4-shift quadrature phase shift keying (QPSK) signal. A new nonlinear GaAs FET model, instead of the conventional large signal GaAs FET model, is presented. It incorporates the phase distortion mechanism in a class AB amplifier. Using the results of the analysis, the authors designed a low phase distortion power amplifier by optimizing circuit parameters and device parameters, which had a low phase variation of less than 2 degrees .<>
Keywords :
III-V semiconductors; cellular radio; digital radio systems; electric distortion; field effect transistors; gallium arsenide; microwave amplifiers; power amplifiers; radiofrequency amplifiers; semiconductor device models; solid-state microwave circuits; ultra-high-frequency amplifiers; 950 MHz; FET power amplifier; GaAs; QPSK; UHF; class AB amplifier; digital cellular application; low phase distortion; mobile radio; nonlinear GaAs FET model; phase distortion mechanism; pi /4-shift; quadrature PSK signal; quadrature phase shift keying; FETs; Gallium arsenide; Impedance measurement; Nonlinear distortion; Phase distortion; Phase measurement; Power amplifiers; Power generation; Power measurement; Quadrature phase shift keying;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.188037
