High voltage devices integration into advanced CMOS technologies

Author

Bianchi, R.A. ; Monsieur, F. ; Blanchet, F. ; Raynaud, C. ; Noblanc, O.

Author_Institution

STMicroelectronics, Crolles

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

This paper focuses on CMOS technologies for mobile applications having integrated high voltage devices to address analog baseband and RF power applications. Technology evolution from BCD-like to advanced CMOS technologies on bulk and thin SOI substrates and some selected device architectures (extended drain MOSFET, drift MOSFET, lateral and vertical diffused MOSFET) are reviewed. Main challenges encountered when integrating these devices in advanced CMOS are explained. The influence of the gate oxide thickness on the relevant figures of merit and some considerations on performance-reliability trade-off are provided.

Keywords

CMOS integrated circuits; high-voltage techniques; mobile handsets; power MOSFET; power amplifiers; radiofrequency amplifiers; silicon-on-insulator; CMOS technology; RF amplifier; RF power application; Si-SiO₂; analog baseband application; bulk SOI substrate; gate oxide thickness; high voltage device integration; integrated high voltage device; mobile handset application; thin SOI substrate; Baseband; Batteries; CMOS process; CMOS technology; Costs; Energy management; Light emitting diodes; MOSFET circuits; Radio frequency; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796634

Filename

4796634