Session 7: Solid-state and nanoelectronic devices - spin devices, batteries and steep slope FETs

This session addresses new concepts in spintronics, advanced sub-60mV/dec transistors and the benefits of nanotechnology in battery applications. The first invited talk from D. Awschalom of The University of California at Santa Barbara gives an overview of the recent dramatic advances on controlling single spins. The second presentation by L. Leem et al., from Stanford University presents a new concept for logic applications with spin-torque devices, followed by F. Mayer et al., from CEA-LETI reporting on experimental investigations of advanced tunnel FETs. The forth talk by G. Salvatore et al., of Ecole Polytechnique Federale de Lausanne demonstrates the first experimental verification of recently predicted subthreshold-reduction technique based on ferroelectric gate materials. A novel transistor design which uses positive feedback to achieve steep switching behaviour is presented by A. Padilla et al., from the University of California at Berkeley, in the fifth talk. Finally, Y. Cui et al., from Stanford University will highlight the benefits of nanotechnology for the enhancement of battery capacity in an invited talk.