DocumentCode
2928516
Title
A millimeterwave subharmonically pumped resistive mixer based on a heterostructure field effect transistor technology
Author
Zirath, H. ; Angelov, I. ; Rorsman, N.
Author_Institution
Chalmers Univ. of Technol., Goteborg, Sweden
fYear
1992
fDate
1-5 June 1992
Firstpage
599
Abstract
A subharmonically pumped resistive mixer (SPRM) working at millimeter waves based on a heterostructure FET (HFET) technology is described. Nonlinear simulations of the mixer were performed and a special dual HFET chip was developed and fabricated for the demonstration of this mixer. Mixer circuits were fabricated and operational characteristics at 40-45 GHz were investigated.<>
Keywords
equivalent circuits; high electron mobility transistors; mixers (circuits); solid-state microwave circuits; 40 to 45 GHz; EHF; dual HFET chip; field effect transistor; heterostructure FET; millimeter waves; nonlinear simulation; resistive mixer; subharmonically pumped; Circuit simulation; Diodes; Frequency estimation; Gallium arsenide; HEMTs; Local oscillators; Low voltage; MODFETs; Molecular beam epitaxial growth; Semiconductor materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location
Albuquerque, NM, USA
ISSN
0149-645X
Print_ISBN
0-7803-0611-2
Type
conf
DOI
10.1109/MWSYM.1992.188053
Filename
188053
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