Session 8: Modeling and simulation - advances in modeling low dimensional structures

This session presents recent advances in the simulation of low dimensional structures. The session begins with an invited paper by Klimeck et al., from Purdue. This paper reviews the progress towards atomistic 3D quantum transport of nano-scale semiconductor devices. Betti et al., from University of Pisa will then address shot noise in quasi one-dimensional FETs. The impact of strain on GeSi core shell nano-wire FETs is the subject of the next paper by He et al., from Peking University. The fourth paper by Khayer et al., from the University of California at Riverside analyzes the quantum capacitance limit in InSb nano-wires. Guan and other investigators from Stanford and Tsinghua Universities focus next on atomistic simulations of graphene nano-ribbon - metal contacts. The potential of graphene nano-ribbons as interconnects is the subject of a paper by Xu et al., from the University of California at Santa Barbara.