Title :
From NEMO1D and NEMO3D to OMEN: Moving towards atomistic 3-D quantum transport in nano-scale semiconductors
Author :
Klimeck, Gerhard ; Luisier, Mathieu
Author_Institution :
Birck Nanotechnol. Center, Purdue Univ., West Lafayette, IN
Abstract :
Lessons learned in 15 years of NEMO development starting from quantitative and predictive resonant tunneling diode (RTD) to multi-million atom electronic structure modeling and the path for OMEN are laid out. The recent OMEN capabilities enable realistically large 3D atomistic nano-scale device simulation.
Keywords :
band structure; nanoelectronics; quantum theory; resonant tunnelling diodes; semiconductor device models; 3D atomistic nano-scale device simulation; NEMO development; NEMO1D; NEMO3D; OMEN; multi-million atom electronic structure modeling; nanoelectronic modeling; resonant tunneling diode; Brillouin scattering; Indium gallium arsenide; Nanotechnology; Particle scattering; Phonons; Predictive models; Quantum computing; Quantum mechanics; Silicon; Voltage;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796647
