DocumentCode
2928671
Title
Modeling of schottky and ohmic contacts between metal and graphene nanoribbons using extended hückel theory (EHT)-based NEGF method
Author
Guan, Ximeng ; Ran, Qiushi ; Zhang, Ming ; Yu, Zhiping ; Wong, H. S Philip
Author_Institution
Dept. of Electr. Eng., Stanford Univ., Stanford, CA
fYear
2008
fDate
15-17 Dec. 2008
Firstpage
1
Lastpage
4
Abstract
The extended huckel theory (EHT)-based NEGF method is applied to perform atomistic quantum transport simulation of Schottky and ohmic metal-GNR contacts with different metal electrodes. Effects induced by changing the GNR orientation or the number of graphene layers are discussed. The interface dipole due to the polarization of chemical bond is found to have a significant impact on the contact behavior.
Keywords
EHT calculations; Schottky barriers; graphene; C; GNR orientation; Schottky-ohmic contacts; chemical bonds; extended Huckel theory; interface dipole; metal-graphene nanoribbons; quantum transport simulation; Atomic layer deposition; Atomic measurements; Bonding; Chemicals; Electrodes; Electrons; Hydrogen; Ohmic contacts; Polarization; Surface-mount technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location
San Francisco, CA
ISSN
8164-2284
Print_ISBN
978-1-4244-2377-4
Electronic_ISBN
8164-2284
Type
conf
DOI
10.1109/IEDM.2008.4796650
Filename
4796650
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