Title :
Pseudomorphic inverted HEMT suitable to low supplied voltage application
Author :
Kasashima, M. ; Arai, Y. ; Fujishiro, H.I. ; Nakamura, H. ; Nishi, S.
Author_Institution :
Oki Electric Industry Co. Ltd., Tokyo, Japan
Abstract :
The superiority of the pseudomorphic inverted high electron mobility transistor (HEMT) as a low-voltage operating device was revealed. To study the high-frequency properties of the FET, two types of frequency-variable measurement systems which represented active load and common-source circuits were employed. It was confirmed that the feature of low knee voltage in static I-V was preserved above 100 kHz, which predicts the microwave characteristics of the device. Estimated output power was 50% higher than that of the conventional pseudomorphic HEMT at a low supply voltage.<>
Keywords :
high electron mobility transistors; solid-state microwave devices; 100 kHz; active load circuits; common-source circuits; frequency-variable measurement systems; high electron mobility transistor; high-frequency properties; low knee voltage; low supply voltage; low-voltage operating device; output power; pseudomorphic inverted HEMT; static I-V; Circuits; Frequency measurement; HEMTs; Knee; Low voltage; MODFETs; Microwave FETs; Microwave devices; PHEMTs; Power generation;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.188067
