Modeling on statistical distribution of noise parameters in pulse-doped GaAs MESFETs

Author

Shiga, N. ; Nakajima, S. ; Otobe, K. ; Sekiguchi, T. ; Kuwata, N. ; Matsuzaki, K. ; Hayashi, H.

Author_Institution

Sumitomo Electric Industries Ltd., Yokohama, Japan

fYear

1992

fDate

1-5 June 1992

Firstpage

655

Abstract

Process-related variation of noise parameters in pulse-doped GaAs MESFETs is discussed. Fluctuation in gate length of the proposed devices is shown to be a dominant source of variation in noise parameters. The statistical distribution of the minimum noise figure (Fmin) is modeled and the probability density function is described. A comparison between the calculated result of the derived equation and the measured distribution of Fmin is also shown.<>

Keywords

III-V semiconductors; MMIC; Schottky gate field effect transistors; electronics industry; field effect integrated circuits; gallium arsenide; semiconductor device noise; semiconductor doping; semiconductor process modelling; solid-state microwave devices; GaAs; MMIC; gate length fluctuation; minimum noise figure; modelling; noise parameters; probability density function; process related variation; pulse-doped GaAs MESFETs; semiconductors; statistical distribution; variation in noise parameters; FETs; Gallium arsenide; MESFETs; MMICs; Noise figure; Probability density function; Pulse amplifiers; Research and development; Satellite broadcasting; Statistical distributions;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.188068

Filename

188068