Title :
Transient response of high electric field picosecond photoconductive switch
Author :
Huang, S.-l.L. ; Lee, C.H.
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Abstract :
A numerical analysis has been performed to investigate the transient response of picosecond photoconductive switches under high electric field bias. The combined effect of carrier recombination and sweep-out coupled with the effect of velocity overshoot and saturation have been quantitatively analyzed. The simulated results show that switches operating in the sweep-out regime can be as fast as switches operating in the recombination mode.<>
Keywords :
digital simulation; numerical analysis; photoconducting devices; semiconductor device models; semiconductor switches; carrier recombination; high electric field bias; high field photoconductive switch; numerical analysis; picosecond photoconductive switch; recombination mode; simulated results; sweep-out; sweep-out regime; transient response; velocity overshoot; velocity saturation; Bandwidth; Charge carrier processes; Educational institutions; Electron mobility; Photoconductivity; Pulse generation; Spontaneous emission; Switches; Transient response; Utility programs;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.188072
