• DocumentCode
    2928786
  • Title

    Characterization and modelling of low-frequency noise in PCM devices

  • Author

    Fantini, P. ; Beneventi, G. Betti ; Calderoni, A. ; Larcher, L. ; Pavan, P. ; Pellizzer, F.

  • Author_Institution
    R&D - Technol. Dev., Numonyx, Agrate Brianza
  • fYear
    2008
  • fDate
    15-17 Dec. 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Low-frequency noise in PCM devices is experimentally investigated providing a new physical model for the amorphous GST (Ge2Sb2Te5) material. Noise intensity is characterized and modelled as a function of bias, temperature and size. Findings from 1/f noise analysis are used to understand the drift mechanism of the amorphous state resistance.
  • Keywords
    1/f noise; antimony compounds; germanium compounds; phase change memories; 1/f noise analysis; Ge2Sb2Te5; PCM device; amorphous GST material; drift mechanism; low-frequency noise; phase change memory; Low-frequency noise; Phase change materials;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2008. IEDM 2008. IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    8164-2284
  • Print_ISBN
    978-1-4244-2377-4
  • Electronic_ISBN
    8164-2284
  • Type

    conf

  • DOI
    10.1109/IEDM.2008.4796656
  • Filename
    4796656
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2928786