A model for MOS effective channel mobility with emphasis in the subthreshold and transition region

Author

Yang, Kewei ; Meitzler, Richard C. ; Andreou, Andreas G.

Author_Institution

Dept. of Electr. & Comput. Eng., Johns Hopkins Univ., Baltimore, MD, USA

Volume

1

fYear

1994

fDate

30 May-2 Jun 1994

Firstpage

431

Abstract

In this work, the effects of surface potential fluctuations on the channel charge of a MOSFET are studied. By accounting for surface potential saturation, continuous models from below to above threshold are developed for the effective channel carrier concentration, the effective channel conductivity and, most importantly, the effective channel carrier mobility. The modeled mobility shows a dramatic drop-off around the threshold voltage, in agreement with experimental results. The equations developed herein may be used to improve the accuracy of existing transistor models for circuit simulation

Keywords

MOSFET; carrier density; carrier mobility; fluctuations; semiconductor device models; surface potential; MOS effective channel mobility; MOSFET; carrier mobility; channel charge; circuit simulation; continuous models; effective channel carrier concentration; effective channel conductivity; subthreshold region; surface potential fluctuations; surface potential saturation; threshold voltage; transistor models; transition region; Charge carrier density; Circuit simulation; Equations; Fluctuations; Gaussian distribution; MOSFET circuits; Microscopy; Silicon; Thermal conductivity; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1994. ISCAS '94., 1994 IEEE International Symposium on

Conference_Location

London

Print_ISBN

0-7803-1915-X

Type

conf

DOI

10.1109/ISCAS.1994.408831

Filename

408831