Energy band engineered unified-RAM (URAM) for multi-functioning 1T-DRAM and NVM

Author

Han, Jin-Woo ; Ryu, Seong-Wan ; Kim, Sungho ; Kim, Chung-Jin ; Ahn, Jae-Hyuk ; Choi, Sung-Jin ; Choi, Kyu Jin ; Cho, Byung Jin ; Kim, Jin Soo ; Kim, Kwang Hee ; Lee, Gi Sung ; Oh, Jae Sub ; Song, Myong Ho ; Park, Yun Chang ; Kim, Jeoung Woo ; Choi, Yang-K

Author_Institution

KAIST, Daejeon

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

A novel fusion memory is proposed as a new paradigm of silicon based memory technology. An O/N/O gate dielectric and a floating body are combined with a FinFET, and the non-volatile memory (NVM) and high speed capacitorless 1T-DRAM are performed in a single transistor. A nitride trap layer is used as an electron storage node for NVM, and hetero-epitaxially grown Si/Si_1-xGe_x energy band engineered bulk substrates allow excess hole storage for 1T-DRAM. Highly reliable 1T-DRAM and NVM are demonstrated.

Keywords

DRAM chips; Ge-Si alloys; MOSFET; elemental semiconductors; silicon; FinFET; Si-Si_1-xGe_x; energy band engineered bulk substrates; floating body; gate dielectric; high speed capacitorless IT-DRAM; multi-functioning electron storage node; nitride trap layer; nonvolatile memory; single transistor; Capacitance-voltage characteristics; Charge carrier processes; Dielectric substrates; Electron traps; Energy storage; FinFETs; Nonvolatile memory; Power engineering and energy; Reliability engineering; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796658

Filename

4796658