DocumentCode
2929024
Title
MOSFET performance scaling: Limitations and future options
Author
Antoniadis, Dimitri A. ; Khakifirooz, Ali
Author_Institution
Microsyst. Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA
fYear
2008
fDate
15-17 Dec. 2008
Firstpage
1
Lastpage
4
Abstract
Prospects of velocity enhancement as the main driver of performance scaling in future CMOS are examined. Limits of velocity enhancement in uniaxially strained Si are first presented and then outlooks of novel channel materials such as Ge and III-V semiconductors are discussed. Finally, characteristics of performance scaling under power dissipation constraints are studied.
Keywords
CMOS integrated circuits; III-V semiconductors; MOSFET; driver circuits; elemental semiconductors; germanium; silicon; CMOS performance scaling; Ge; MOSFET performance scaling; Si; channel materials; driver circuits; power dissipation constraints; velocity enhancement; CMOS technology; Capacitive sensors; Circuit optimization; Electrons; III-V semiconductor materials; Laboratories; MOSFET circuits; Optical scattering; Power dissipation; Uniaxial strain;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location
San Francisco, CA
ISSN
8164-2284
Print_ISBN
978-1-4244-2377-4
Electronic_ISBN
8164-2284
Type
conf
DOI
10.1109/IEDM.2008.4796665
Filename
4796665
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