Title :
MOSFET performance scaling: Limitations and future options
Author :
Antoniadis, Dimitri A. ; Khakifirooz, Ali
Author_Institution :
Microsyst. Technol. Labs., Massachusetts Inst. of Technol., Cambridge, MA
Abstract :
Prospects of velocity enhancement as the main driver of performance scaling in future CMOS are examined. Limits of velocity enhancement in uniaxially strained Si are first presented and then outlooks of novel channel materials such as Ge and III-V semiconductors are discussed. Finally, characteristics of performance scaling under power dissipation constraints are studied.
Keywords :
CMOS integrated circuits; III-V semiconductors; MOSFET; driver circuits; elemental semiconductors; germanium; silicon; CMOS performance scaling; Ge; MOSFET performance scaling; Si; channel materials; driver circuits; power dissipation constraints; velocity enhancement; CMOS technology; Capacitive sensors; Circuit optimization; Electrons; III-V semiconductor materials; Laboratories; MOSFET circuits; Optical scattering; Power dissipation; Uniaxial strain;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796665
