Investigation of HBT oscillator noise through 1/f noise and noise upconversion studies

Author

Tutt, M.N. ; Pavlidis, D. ; Khatibzadeth, A. ; Bayraktaroglu, B.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA

fYear

1992

fDate

1-5 June 1992

Firstpage

727

Abstract

It was shown that the L/(f) characteristics of a heterojunction bipolar transistor (HBT) dielectric resonator oscillator can be approximated by using the HBT´s low-frequency noise spectra and the oscillator upconversion factor´ K´/sub FM/. Experimental studies have been used for this purpose and the measured L(f) ranged from -89 dBc/Hz to -101 dBc/Hz at a 10-kHz offset frequency. It was shown that the upconversion of the low-frequency noise is the primary cause of L(f) in the oscillator and its frequency dependence is directly affected by the low-frequency noise spectrum rather than by K´/sub FM/ itself. dL(f)/df deviates from the -30-dB/decade rate, expected for upconversion of ideal 1/f noise, due to traps in the device.<>

Keywords

dielectric resonators; heterojunction bipolar transistors; microwave oscillators; semiconductor device noise; solid-state microwave circuits; 1/f noise; HBT oscillator noise; dielectric resonator oscillator; heterojunction bipolar transistor; low-frequency noise spectra; noise upconversion; traps; Circuit noise; Contracts; Frequency measurement; Heterojunction bipolar transistors; Laboratories; Low-frequency noise; Microwave devices; Noise measurement; Oscillators; Phase noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.188088

Filename

188088