Direct calculation of the HBT equivalent circuit from measured S-parameters

Author

Pehlke, D.R. ; Pavlidis, D.

Author_Institution

Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA

fYear

1992

fDate

1-5 June 1992

Firstpage

735

Abstract

A new approach for directly calculating the heterojunction bipolar transistor (HBT) equivalent circuit from measured S-parameters is presented. Analytically derived rather than fitted solutions are obtained in this way. Extrinsic as well as intrinsic element values are computed without the use of special test structures or additional measurement steps. Bias-dependent results for base resistance, collector resistance, base-collector capacitance, base transport factor, and base and collector transit times are discussed.<>

Keywords

S-parameters; equivalent circuits; heterojunction bipolar transistors; solid-state microwave devices; HBT equivalent circuit; S-parameters; base resistance; base transport factor; base-collector capacitance; collector resistance; extrinsic element values; heterojunction bipolar transistor; intrinsic element values; transit times; Circuit testing; Electrical resistance measurement; Equivalent circuits; Frequency measurement; Heterojunction bipolar transistors; Impedance; Isolation technology; Microelectronics; Scattering parameters; Solid state circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.188090

Filename

188090