Title :
Direct calculation of the HBT equivalent circuit from measured S-parameters
Author :
Pehlke, D.R. ; Pavlidis, D.
Author_Institution :
Solid State Electron. Lab., Michigan Univ., Ann Arbor, MI, USA
Abstract :
A new approach for directly calculating the heterojunction bipolar transistor (HBT) equivalent circuit from measured S-parameters is presented. Analytically derived rather than fitted solutions are obtained in this way. Extrinsic as well as intrinsic element values are computed without the use of special test structures or additional measurement steps. Bias-dependent results for base resistance, collector resistance, base-collector capacitance, base transport factor, and base and collector transit times are discussed.<>
Keywords :
S-parameters; equivalent circuits; heterojunction bipolar transistors; solid-state microwave devices; HBT equivalent circuit; S-parameters; base resistance; base transport factor; base-collector capacitance; collector resistance; extrinsic element values; heterojunction bipolar transistor; intrinsic element values; transit times; Circuit testing; Electrical resistance measurement; Equivalent circuits; Frequency measurement; Heterojunction bipolar transistors; Impedance; Isolation technology; Microelectronics; Scattering parameters; Solid state circuits;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.188090
