Reliability analysis of microwave GaAs/AlGaAs HBTs with beryllium and carbon doped base

Author

Yamada, F.M. ; Oki, A.K. ; Streit, D.C. ; Saito, Y. ; Umemoto, D.K. ; Tran, L.T. ; Bui, S. ; Velebir, J.R. ; McIver, G.W.

Author_Institution

TRW Inc., Redondo Beach, CA, USA

fYear

1992

fDate

1-5 June 1992

Firstpage

739

Abstract

The reliability characteristics of microwave GaAs/AlGaAs negative-positive-negative (NPN) heterojunction bipolar transistors (HBTs) with beryllium (Be) and carbon (C) doped base layer have been investigated and compared by means of constant stress lifetest. Three groups of Be-doped devices using a newly developed molecular beam epitaxy (MBE) profile exhibited a median-time-to-failure (MTTF) of up to 1.8*10/sup 8/ hours at 125 degrees C junction temperature based on the lifetest characteristics of DC current gain, beta . The C-doped devices displayed a MTTF of 4.2*10/sup 5/ h under the same conditions. An equivalent failure rate of <0.1 FITs and 119 FITs at 10/sup 5/ h were calculated for Be and C doped devices, respectively.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; heterojunction bipolar transistors; life testing; molecular beam epitaxial growth; reliability; semiconductor device testing; semiconductor epitaxial layers; solid-state microwave devices; 125 degC; DC current gain; GaAs-AlGaAs; III-V semiconductors; MTTF; constant stress lifetest; equivalent failure rate; median-time-to-failure; microwave devices; molecular beam epitaxy; npn HBTs; reliability characteristics; Gallium arsenide; Heterojunction bipolar transistors; MOCVD; Microwave devices; Molecular beam epitaxial growth; Silicon; Space technology; Stress; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.188091

Filename

188091