DocumentCode
2929103
Title
Dual-gate FET millimeter-wave frequency divider
Author
Shan, Chen Ru ; Tai, Zhang Qing
Author_Institution
Dept. of Electr. Eng., Nanjing Univ. of Sci. & Technol., China
fYear
1996
fDate
12-15 Aug 1996
Firstpage
250
Lastpage
254
Abstract
The feasibility of using a dual-gate FET as the frequency divider in the Ka-band with wide bandwidth has been demonstrated. By appropriately biasing and matching the dual-gate FET, as wide as 10 GHz operating frequency range was obtained
Keywords
III-V semiconductors; field effect transistor circuits; frequency dividers; gallium arsenide; millimetre wave frequency convertors; 10 GHz; EHF; FET MM-wave frequency divider; GaAs; Ka-band; dual-gate FET; millimeter-wave frequency divider; Bandwidth; Feeds; Frequency conversion; Gallium arsenide; Microwave FETs; Microwave frequencies; Millimeter wave technology; Transconductance; Tuned circuits; Varactors;
fLanguage
English
Publisher
ieee
Conference_Titel
Millimeter Wave and Far Infrared Science and Technology, 1996. Proceedings., 4TH International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3619-4
Type
conf
DOI
10.1109/ICMWFT.1996.574850
Filename
574850
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