Session 12: Memory technology - resistive memory and magnetic memory

Most updated progress in resistive memory is presented in the first part of this section. In the first paper, Dr. Waser presents the review of mechanism of resistive switching. Highly reliable ReRAM based on TaOx has exhibited the endurance over 109 cycles and 10 years retention at 85°C. With a thin reactive Ti buffer layer in HfO2 based ReRAM, the operation current can be further reduced down to 25mA. Physical set/reset models of NiO ReRAMs is proposed to evaluate the retention and disturb. Next part of the section is related to magnetic memory. Statistical study of spin-torque-transfer-MRAM exhibits the feasibility of 64Mbit chip at the 90-nm node. With a perpendicular TMR, the low switching current of 49μA and the high switching speed of 4 nsec are demonstrated.