Author :
Wei, Z. ; Kanzawa, Y. ; Arita, K. ; Katoh, Y. ; Kawai, K. ; Muraoka, S. ; Mitani, S. ; Fujii, S. ; Katayama, K. ; Iijima, M. ; Mikawa, T. ; Ninomiya, T. ; Miyanaga, R. ; Kawashima, Y. ; Tsuji, K. ; Himeno, A. ; Okada, T. ; Azuma, R. ; Shimakawa, K. ; Suga
Abstract :
Highly reliable TaOx ReRAM has been successfully demonstrated. The memory cell shows stable pulse switching with endurance over 109 cycles, sufficient retention exceeding 10 years at 85degC. TaOx exhibits stable high and low resistance states based on the redox reaction mechanism, confirmed by HX-PES directly for the first time. An 8 kbit 1T1R memory array with a good operating window has been fabricated using the standard 0.18 mum CMOS process.
Keywords :
CMOS memory circuits; X-ray photoelectron spectra; arrays; electrical resistivity; integrated circuit reliability; oxidation; random-access storage; reduction (chemical); tantalum compounds; 0.18 mum CMOS process; 1T1R memory array; HX-PES; ReRAM reliability; TaOx; X-ray photoemission spectroscopy; endurance; memory cell; pulse switching stability; redox reaction mechanism; resistance random access memory; resistance states; retention property; size 0.18 micron; temperature 85 degC; Anodes; CMOS process; CMOS technology; Chemistry; Cities and towns; Electrodes; Flash memory; Random access memory; Sputtering; Stability;
