W-band and D-band low noise amplifiers using 0.1 micron pseudomorphic InAlAs/InGaAs/InP HEMTs

Author

Chow, P.D. ; Tan, K. ; Streit, D. ; Garske, D. ; Liu, P. ; Lai, R.

Author_Institution

TRW, Redondo Beach, CA, USA

fYear

1992

fDate

1-5 June 1992

Firstpage

807

Abstract

Reports the W-band and D-band performance of 0.1- mu m T-gate pseudomorphic In/sub 0.53/Al/sub 0.47/As/In/sub 0.60/GaAs high electron mobility transistors (HEMTs). The device achieved 1.3-dB noise figure and 8.2-dB associated gain when biased and tuned for a minimum noise figure at 95 GHz. It achieved 7.3-dB gain when biased and tuned for gain at 141.5 GHz. The two-stage hybrid low-noise amplifier (LNA) fabricated with these devices demonstrated a minimum noise figure of 2.6 dB and 14.2 dB associated gain at a waveguide interface at 92 GHz.<>

Keywords

aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; semiconductor device noise; solid-state microwave circuits; solid-state microwave devices; 0.1 micron; 1.3 dB; 14.2 dB; 141.5 GHz; 2.6 dB; 7.3 dB; 8.2 dB; 92 GHz; 95 GHz; D-band; HEMTs; III-V semiconductors; InAlAs-InGaAs-InP; T-gate; W-band; high electron mobility transistors; low noise amplifiers; Frequency; Gain measurement; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Low-noise amplifiers; MODFETs; Noise figure; Semiconductor device noise;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.188110

Filename

188110