V-band and W-band broadband, monolithic distributed frequency multipliers

Author

Carman, E. ; Case, M. ; Kamegawa, M. ; Yu, R. ; Giboney, K. ; Rodwell, M.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

fYear

1992

fDate

1-5 June 1992

Firstpage

819

Abstract

Broadband V-band and W-band frequency multiplication is reported using soliton propagation on GaAs monolithic nonlinear transmission lines. With 24-dBm input, a doubler attained 17.4-dBm peak output power with at least 52-63.1-GHz 3-dB bandwidth, and a tripler attained 12.8-dBm peak output power with at least 81-108.8-GHz 3-dB bandwidth. These multipliers were fabricated with 3- mu m design rules on GaAs and driven with lower-frequency amplifiers, and are cost-effective sources of high-frequency power.<>

Keywords

III-V semiconductors; MMIC; frequency multipliers; solitons; 3 micron; 52 to 63.1 GHz; 81 to 108.8 GHz; GaAs; V-band; W-band; design rules; doubler; high-frequency power; lower-frequency amplifiers; monolithic distributed frequency multipliers; monolithic nonlinear transmission lines; soliton propagation; tripler; Bandwidth; Capacitance; Frequency conversion; Impedance; Power amplifiers; Power generation; Power transmission lines; Propagation delay; Schottky diodes; Solitons;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.188113

Filename

188113