Predictable yield-driven circuit optimization

Author

Bandler, J.W. ; Ye, S. ; Cai, Q. ; Biernacki, R.M. ; Chen, S.H.

Author_Institution

Optimization Systems Associates Inc., Dundas, Ont., Canada

fYear

1992

fDate

1-5 June 1992

Firstpage

837

Abstract

The authors present a comprehensive approach to predictable yield optimization. They utilize a new physics-based statistical GaAs MESFET model which combines the advantages of the DC Khatibzadeh and Trew model and the small-signal Ladbrooke formulas. The yield of a broadband amplifier was significantly improved after optimization. Predicted yield over a range of specifications was verified by device data. The benefits of simultaneous circuit-device yield optimization assisted by yield sensitivity analysis are demonstrated.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; circuit CAD; gallium arsenide; microwave circuits; optimisation; semiconductor device models; sensitivity analysis; solid-state microwave devices; GaAs; broadband amplifier; predictable yield optimization; simultaneous circuit-device yield optimization; statistical MESFET model; yield sensitivity analysis; yield-driven circuit optimization; Broadband amplifiers; Circuit optimization; Design optimization; Doping; Gallium arsenide; MESFETs; Optimized production technology; Semiconductor process modeling; Sensitivity analysis; Statistics;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.188118

Filename

188118