Title :
Predictable yield-driven circuit optimization
Author :
Bandler, J.W. ; Ye, S. ; Cai, Q. ; Biernacki, R.M. ; Chen, S.H.
Author_Institution :
Optimization Systems Associates Inc., Dundas, Ont., Canada
Abstract :
The authors present a comprehensive approach to predictable yield optimization. They utilize a new physics-based statistical GaAs MESFET model which combines the advantages of the DC Khatibzadeh and Trew model and the small-signal Ladbrooke formulas. The yield of a broadband amplifier was significantly improved after optimization. Predicted yield over a range of specifications was verified by device data. The benefits of simultaneous circuit-device yield optimization assisted by yield sensitivity analysis are demonstrated.<>
Keywords :
III-V semiconductors; Schottky gate field effect transistors; circuit CAD; gallium arsenide; microwave circuits; optimisation; semiconductor device models; sensitivity analysis; solid-state microwave devices; GaAs; broadband amplifier; predictable yield optimization; simultaneous circuit-device yield optimization; statistical MESFET model; yield sensitivity analysis; yield-driven circuit optimization; Broadband amplifiers; Circuit optimization; Design optimization; Doping; Gallium arsenide; MESFETs; Optimized production technology; Semiconductor process modeling; Sensitivity analysis; Statistics;
Conference_Titel :
Microwave Symposium Digest, 1992., IEEE MTT-S International
Conference_Location :
Albuquerque, NM, USA
Print_ISBN :
0-7803-0611-2
DOI :
10.1109/MWSYM.1992.188118
