• DocumentCode
    2929499
  • Title

    ESD qualification changes for 45nm and beyond

  • Author

    Duvvury, Charvaka

  • Author_Institution
    Texas Instrum. Inc., Dallas, TX
  • fYear
    2008
  • fDate
    15-17 Dec. 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    As the silicon technologies advance further into sub-50 nm feature sizes, the circuit demands for high-speed operation are continually making ESD into a challenging issue. This paper reviews the current perception about ESD and why there must be an immediate paradigm shift for the ESD qualification requirements.
  • Keywords
    electrostatic discharge; radiation hardening (electronics); semiconductor technology; ESD qualification changes; silicon technology; size 45 nm; Breakdown voltage; Capacitance; Current density; Degradation; Electrostatic discharge; Integrated circuit interconnections; Integrated circuit modeling; Protection; Qualifications; Silicon;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2008. IEDM 2008. IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    8164-2284
  • Print_ISBN
    978-1-4244-2377-4
  • Electronic_ISBN
    8164-2284
  • Type

    conf

  • DOI
    10.1109/IEDM.2008.4796688
  • Filename
    4796688
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2929499