• DocumentCode
    2929516
  • Title

    Impact of Strain on ESD Robustness of FinFET Devices

  • Author

    Griffoni, A. ; Thijs, S. ; Russ, C. ; Trémouilles, D. ; Scholz, M. ; Linten, D. ; Collaert, N. ; Rooyackers, R. ; Duvvury, C. ; Gossner, H. ; Meneghesso, G. ; Groeseneken, G.

  • Author_Institution
    IMEC, Leuven
  • fYear
    2008
  • fDate
    15-17 Dec. 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The ESD performance of gated FinFET diodes and multi-gate NMOS devices in both active MOS-diode and parasitic-bipolar mode are investigated, highlighting the impact of strained SiN layers. Strain improves the ESD robustness up to 30% in multi-fin FinFETs. A different failure mechanism is discovered in strained NMOS FinFETs for the parasitic-bipolar mode.
  • Keywords
    MOSFET; electrostatic discharge; failure analysis; semiconductor device breakdown; semiconductor device reliability; semiconductor diodes; silicon compounds; ESD robustness; FinFET devices; SiN; active MOS-diode; multigate NMOS device; parasitic-bipolar mode; strain impact; Capacitive sensors; Diodes; Electrostatic discharge; Failure analysis; FinFETs; MOS devices; Robustness; Semiconductor films; Silicon compounds; Thermal conductivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2008. IEDM 2008. IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    8164-2284
  • Print_ISBN
    978-1-4244-2377-4
  • Electronic_ISBN
    8164-2284
  • Type

    conf

  • DOI
    10.1109/IEDM.2008.4796689
  • Filename
    4796689
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2929516