Title :
Scaling of In0.7Ga0.3As buried-channel MOSFETs
Author :
Sun, Yanning ; Kiewra, E.W. ; de Souza, J.P. ; Bucchignano, J.J. ; Fogel, K.E. ; Sadana, D.K. ; Shahidi, G.G.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY
Abstract :
Sub-100 nm short-channel In0.7Ga0.3As MOSFETs are demonstrated for both depletion- and enhancement-mode devices. High current of 960 muA/mum and record transconductance of 793 muS/mum have been achieved. Scaling behavior is investigated experimentally down to 80 nm for the first time in III-V MOSFETs. Good scaling behavior is observed for on-state current, transconductance, as well as the virtual source velocity.
Keywords :
III-V semiconductors; MOSFET; gallium arsenide; indium compounds; nanoelectronics; In0.7Ga0.3As; buried-channel III-V MOSFET; depletion-mode devices; enhancement-mode devices; on-state current; scaling behavior; size 100 nm; transconductance; virtual source velocity; Aluminum oxide; Etching; Gate leakage; III-V semiconductor materials; Indium gallium arsenide; Lithography; Logic devices; MOSFETs; Sun; Transconductance;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796696
