MIS slow-wave structures over a wide range of parameters

Author

Glib, J.P.K. ; Balanis, C.A.

Author_Institution

Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA

fYear

1992

fDate

1-5 June 1992

Firstpage

877

Abstract

The authors study lossy multilayer, multiconductor microstrip structures using the spectral domain approach. The modal attenuation and propagation constants of these structures are given over an extremely wide range of substrate parameters and frequencies, covering all three regions: low loss, slow wave, and skin effect. The modal attenuation and propagation constants are presented for two and four conductor structures as a function of the substrate loss tangent. Single conductor structures are characterized with contour plots showing the complex effective dielectric constant as a function of both frequency and conductivity.<>

Keywords

MMIC; VLSI; digital integrated circuits; metal-insulator-semiconductor structures; microstrip components; skin effect; spectral-domain analysis; MIS slow-wave structures; MMIC; VLSI interconnects; complex effective dielectric constant; high-speed digital IC; lossy multilayer structures; low loss region; modal attenuation; multiconductor microstrip structures; propagation constants; skin effect; spectral domain approach; substrate loss tangent; Attenuation; Conductors; Dielectric constant; Dielectric substrates; Frequency; Microstrip; Nonhomogeneous media; Propagation constant; Propagation losses; Skin effect;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.188128

Filename

188128