Localized ultra-thin GeOI: An innovative approach to germanium channel MOSFETs on bulk Si substrates

Author

Batail, E. ; Monfray, S. ; Tabone, C. ; Kermarrec, O. ; Damlencourt, J.F. ; Gautier, P. ; Rabille, G. ; Arvet, C. ; Loubet, N. ; Campidelli, Y. ; Hartmann, J.-M. ; Pouydebasque, A. ; Delaye, V. ; Le Royer, C. ; Ghibaudo, G. ; Skotnicki, T. ; Deleonibus, S

Author_Institution

STMicroelectronics, Crolles

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

In this paper we compare two innovative approaches to the integration of Ge-channel on Insulator MOSFETs from conventional Bulk-Si substrates. The first one is based on the Ge-condensation process, and the second one relies on the epitaxy of a pure ultra-thin 2.3 nm-thick Ge layer performed directly on Si. With the second approach, we demonstrate for the first time highly-performant Localized GeOI pMOS devices down to 75 nm gate length, with controlled threshold voltage and drive current up to 600 muA/m@-1.1 V. We show a +35% improvement in drive current compared to Si references for the same Gate overdrive.

Keywords

MOSFET; condensation; elemental semiconductors; germanium; insulators; substrates; Ge; Ge-condensation process; Germanium channel MOSFET; bulk Si substrates; insulator MOSFET; localized ultra-thin GeOI; size 2.3 nm; size 75 nm; voltage 1.1 V; Degradation; Epitaxial growth; Germanium silicon alloys; Insulation; MOS devices; MOSFETs; Photonic band gap; Silicon germanium; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796704

Filename

4796704