DocumentCode :
2929877
Title :
Spectrum control of THz radiation from InSb surface by composite contribution of displacement current and difference frequency mixing
Author :
Kono, S. ; Tani, M. ; Sakai, K.
Author_Institution :
Commun. Res. Lab., Minist. of Posts & Telecommun., Kobe, Japan
fYear :
2000
fDate :
7-12 May 2000
Firstpage :
558
Lastpage :
559
Abstract :
Summary form only given.Terahertz radiation from semiconductor surfaces irradiated with ultrashort optical pulses has been intensively studied as a novel radiation source. We observed the change of the THz radiation spectrum from InSb dependent on the azimuthal angle. The change of the spectra can be due to the interference of the THz radiation caused by the displacement current and by the difference frequency mixing. This effect can be used for controlling the THz radiation spectrum.
Keywords :
III-V semiconductors; high-speed optical techniques; indium compounds; infrared sources; optical frequency conversion; photoconductivity; submillimetre wave generation; submillimetre wave spectra; DC offset; InSb; azimuthal angle dependence; composite contribution; difference frequency mixing; displacement current; frequency shift; radiation source; semiconductor surface; spectrum control; terahertz radiation; ultrashort optical pulse irradiated surface; Displacement control;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics, 2000. (CLEO 2000). Conference on
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
1-55752-634-6
Type :
conf
DOI :
10.1109/CLEO.2000.907385
Filename :
907385
Link To Document :
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