Propagation characteristics of lossy distributed GaAs FET structures

Author

Alessandri, F. ; Baini, G. ; D´Inzeo, G. ; Sorrentino, R.

Author_Institution

Microdesign sas, Rome, Italy

fYear

1992

fDate

1-5 June 1992

Firstpage

963

Abstract

The generalized transverse resonance technique was applied to compute the propagation characteristics of distributed FET structures. To account for conductor thickness on the order or less than the skin depth, a modified perturbational approach was applied, which yielded very accurate results with negligible computational effort. The three dominant quasi-transverse electromagnetic modes were found to possess different loss behaviors because of the uneven current distributions on the electrodes. The contributions to the overall loss of the various electrodes, including the house, have been investigated.<>

Keywords

III-V semiconductors; MMIC; field effect transistors; gallium arsenide; losses; microstrip lines; perturbation theory; solid-state microwave devices; GaAs; MMIC microstrip line; conductor thickness; generalized transverse resonance technique; loss behaviors; lossy distributed FET structures; modified perturbational approach; propagation characteristics; quasi-transverse electromagnetic modes; skin depth; uneven current distributions; Conductors; Current distribution; Distributed computing; Electrodes; Electromagnetic propagation; FETs; Gallium arsenide; Propagation losses; Resonance; Skin;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.188150

Filename

188150