Propagation characteristics of lossy distributed GaAs FET structures

The generalized transverse resonance technique was applied to compute the propagation characteristics of distributed FET structures. To account for conductor thickness on the order or less than the skin depth, a modified perturbational approach was applied, which yielded very accurate results with negligible computational effort. The three dominant quasi-transverse electromagnetic modes were found to possess different loss behaviors because of the uneven current distributions on the electrodes. The contributions to the overall loss of the various electrodes, including the house, have been investigated.<>