Title :
Silicon photonic modulator and integration for high-speed applications
Author :
Liao, Ling ; Liu, Ansheng ; Basak, Juthika ; Nguyen, Hat ; Paniccia, Mario ; Chetrit, Yoel ; Rubin, Doron
Author_Institution :
Intel Corp., Santa Clara, CA
Abstract :
We present recent results of a silicon photonic integrated chip that is capable of transmitting data at an aggregate rate of 200 Gb/s. It is based on wavelength division multiplexing where an array of eight high speed silicon optical modulators are monolithically integrated with a demultiplexer and a multiplexer. The modulators, each capable of 25 Gb/s data transmission, are based on the carrier depletion effect of pn diodes, and the demultiplexer/multiplexer is based on a cascaded asymmetric Mach Zehnder interferometer design.
Keywords :
elemental semiconductors; multiplexing equipment; optical modulation; silicon; wavelength division multiplexing; Si; bit rate 200 Gbit/s; carrier depletion effect; cascaded asymmetric Mach Zehnder interferometer design; photonic integrated chip; pn diodes; silicon photonic modulator; wavelength division multiplexing; Aggregates; Data communication; Diodes; High speed optical techniques; Integrated optics; Optical arrays; Optical interferometry; Optical modulation; Silicon; Wavelength division multiplexing;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796726