Single-crystal thin-film bonding on diamond-like carbon film by intermolecular force for super high-density integration of high-power LEDs

Author

Ogihara, M. ; Sagimori, T. ; Mutoh, M. ; Furuta, H. ; Suzuki, T. ; Fujiwara, H. ; Sakuta, M.

Author_Institution

Oki Digital Imaging Corp., Hachioji

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

Good bonding of single-crystal semiconductor thin-film (epifilm) on diamond-like carbon (DLC) thin film formed on the Si substrate (DLC/Si) by intermolecular force at room temperature has been achieved for the first time. Characteristics of super high-density epifilm-LED arrays bonded on DLC/Si are compared with those bonded on polyimide film on the Si substrate (PI/Si). Performance test showed much larger emitted-light-power efficiencies on DLC/Si than those on PI/Si in the larger current-density range. The current-power characteristic curve of the epifilm-LED bonded on DLC/Si was found to saturate at much larger LED-current compared to conventional LEDs on the GaAs substrate. The epifilm-LED on DLC/Si achieved much larger heat-dissipation and higher emitted-light-powers at larger LED-currents.

Keywords

bonding processes; carbon; light emitting diodes; semiconductor thin films; silicon; substrates; diamond-like carbon film; high-power LED; intermolecular force; polyimide film; single-crystal semiconductor thin-film bonding; substrate; Bonding forces; Diamond-like carbon; Light emitting diodes; Polyimides; Semiconductor films; Semiconductor thin films; Substrates; Temperature; Testing; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796729

Filename

4796729