DocumentCode :
2930487
Title :
RF performance of top-gated, zero-bandgap graphene field-effect transistors
Author :
Meric, Inanc ; Baklitskaya, Natalia ; Kim, Philip ; Shepard, Kenneth L.
Author_Institution :
Dept. of Electr. Eng., Columbia Univ., New York, NY
fYear :
2008
fDate :
15-17 Dec. 2008
Firstpage :
1
Lastpage :
4
Abstract :
We present the first experimental high-frequency measurements of graphene field-effect transistors (GFETs), demonstrating an fT of 14.7 GHz for a 500-nm-length device. We also present detailed measurement and analysis of velocity saturation in GFETs, demonstrating the potential for velocities approaching 108 cm/sec and the effect of an ambipolar channel on current-voltage characteristics.
Keywords :
energy gap; graphene; microwave field effect transistors; radiofrequency integrated circuits; semiconductor device measurement; GFET; RF circuits; RF performance; current-voltage characteristics; frequency 14.7 GHz; graphene field-effect transistors; high-frequency measurements; size 500 nm; Charge carrier processes; Chromium; Electrostatics; FETs; Gold; Optical films; Photonic band gap; Quantum capacitance; Radio frequency; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
ISSN :
8164-2284
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
Type :
conf
DOI :
10.1109/IEDM.2008.4796738
Filename :
4796738
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2930487
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