• DocumentCode
    2930487
  • Title

    RF performance of top-gated, zero-bandgap graphene field-effect transistors

  • Author

    Meric, Inanc ; Baklitskaya, Natalia ; Kim, Philip ; Shepard, Kenneth L.

  • Author_Institution
    Dept. of Electr. Eng., Columbia Univ., New York, NY
  • fYear
    2008
  • fDate
    15-17 Dec. 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We present the first experimental high-frequency measurements of graphene field-effect transistors (GFETs), demonstrating an fT of 14.7 GHz for a 500-nm-length device. We also present detailed measurement and analysis of velocity saturation in GFETs, demonstrating the potential for velocities approaching 108 cm/sec and the effect of an ambipolar channel on current-voltage characteristics.
  • Keywords
    energy gap; graphene; microwave field effect transistors; radiofrequency integrated circuits; semiconductor device measurement; GFET; RF circuits; RF performance; current-voltage characteristics; frequency 14.7 GHz; graphene field-effect transistors; high-frequency measurements; size 500 nm; Charge carrier processes; Chromium; Electrostatics; FETs; Gold; Optical films; Photonic band gap; Quantum capacitance; Radio frequency; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2008. IEDM 2008. IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    8164-2284
  • Print_ISBN
    978-1-4244-2377-4
  • Electronic_ISBN
    8164-2284
  • Type

    conf

  • DOI
    10.1109/IEDM.2008.4796738
  • Filename
    4796738
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2930487