• DocumentCode
    2930520
  • Title

    Carbon-based resistive memory

  • Author

    Kreupl, Franz ; Bruchhaus, Rainer ; Majewski, Petra ; Philipp, Jan B. ; Symanczyk, Ralf ; Happ, Thomas ; Arndt, Christian ; Vogt, Mirko ; Zimmermann, Roy ; Buerke, Axel ; Graham, Andrew P. ; Kund, Michael

  • Author_Institution
    Qimonda AG
  • fYear
    2008
  • fDate
    15-17 Dec. 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    We propose carbon as new resistive memory material for non-volatile memories and compare three allotropes of carbon, namely carbon nanotubes, graphene-like conductive carbon and insulating carbon for their possible application as resistance-change material in high density non-volatile memories. Repetitive high-speed switching and the potential for multi-level programming have been successfully demonstrated.
  • Keywords
    carbon; carbon nanotubes; graphene; random-access storage; C; carbon nanotubes; carbon-based resistive memory material; graphene-like conductive carbon; insulating carbon; multilevel programming; nonvolatile memory; resistance-change material; Carbon nanotubes; Conducting materials; Conductivity; Current density; Insulation; Nonvolatile memory; North America; Organic materials; Switches; Temperature distribution;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 2008. IEDM 2008. IEEE International
  • Conference_Location
    San Francisco, CA
  • ISSN
    8164-2284
  • Print_ISBN
    978-1-4244-2377-4
  • Electronic_ISBN
    8164-2284
  • Type

    conf

  • DOI
    10.1109/IEDM.2008.4796740
  • Filename
    4796740
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2930520