Title :
Scaling and variability analysis of CNT-based NEMS devices and circuits with implications for process design
Author :
Dadgour, Hamed ; Cassell, Alan M. ; Banerjee, Kaustav
Author_Institution :
Dept. of ECE, Univ. of California, Santa Barbara, CA
Abstract :
This work presents an extensive scaling analysis of carbon nanotube (CNT) based Nano-Electro Mechanical Switches (NEMS) considering the effect of process variations on both device and circuit level metrics. Implications for NEMS- material, switch architecture and geometry are also analyzed in detail. A rigorous nano-electromechanical simulation methodology in employed to study the operation and reliability of CNT-NEMS devices. It is shown that CNT-NEMS structures become increasingly susceptible to stiction failure and violating performance requirements as feature size scales down, thereby highlighting the need for advanced nanofabrication techniques if these structures are to be integrated in digital ICs.
Keywords :
carbon nanotubes; nanoelectromechanical devices; C; CNT-based NEMS devices; carbon nanotube; circuit level metrics; nanoelectro mechanical switches; rigorous nanoelectromechanical simulation; scaling analysis; stiction failure; variability analysis; Carbon nanotubes; Circuit simulation; Geometry; Integrated circuit reliability; Nanoelectromechanical systems; Nanofabrication; Nanoscale devices; Process design; Switches; Switching circuits;
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
DOI :
10.1109/IEDM.2008.4796742
