Advanced 2D/3D simulations for laser annealed device using an atomistic kinetic Monte Carlo approach and Scanning Spreading Resistance Microscopy (SSRM)

Author

Noda, T. ; Eyben, P. ; Vandervorst, W. ; Vrancken, C. ; Rosseel, E. ; Ortolland, C. ; Clarysse, T. ; Goossens, J. ; De Keersgieter, A. ; Felch, S. ; Schreutelkamp, R. ; Absil, P.P. ; Jurczak, M. ; De Meyer, K. ; Biesemans, S. ; Hoffmann, T.Y.

Author_Institution

Matsushita Electr. Ind. Co. Ltd., Kyoto

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

Atomistic modeling and optimized TCAD simulation strategy for Laser-only annealing device are shown. Multiple laser annealing scans are modeled by using atomistic KMC. KMC clarified that dopant diffusion is changed as a function of laser scan number. SSRM with 1 nm special resolution is used for the 2-dimensional carrier distribution measurement and dopant active level determination. It is shown that 2D profile mapping using SSRM is useful in TCAD simulations.

Keywords

Monte Carlo methods; laser beam annealing; microscopy; technology CAD (electronics); 2-dimensional carrier distribution measurement; 2D profile mapping; TCAD simulation strategy; atomistic kinetic Monte Carlo approach; atomistic modeling; dopant active level determination; dopant diffusion; laser annealed device; scanning spreading resistance microscopy; Atom lasers; Atomic beams; Atomic measurements; Kinetic theory; Laser modes; Laser transitions; Microscopy; Monte Carlo methods; Semiconductor process modeling; Simulated annealing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796745

Filename

4796745