Long-term operation and reliability study of a 1200-V, 880-A all-SiC dual module

SiC MOSFETs are now commercial available and have demonstrated improved efficiency and higher operating temperatures over state of the art silicon components. Ongoing research activities have produced a massively-paralleled all-SiC module to examine the feasibility and reliability of high-current all-SiC modules. This paper documents a reliability study for a 1200-V, 880-A all-SiC dual MOSFET module operated in an experimental circuit. Over 500 hours of circuit runtime has been accumulated and MOSFET characteristics were routinely evaluated. The switches demonstrated a high degree of stability in leakage current, forward resistance, junction temperature rise, and switching energies as all of these characteristics changed less than 14%. With this demonstration of reliability, the substantial benefits of a massively paralleled all-SiC module can be utilized by design engineers for future power electronic systems.