New physical model for ultra-scaled 3D nitride-trapping non-volatile memories

Author

Nowak, E. ; Bocquet, M. ; Perniola, L. ; Ghibaudo, G. ; Molas, G. ; Jahan, C. ; Kies, R. ; Reimbold, G. ; De Salvo, B. ; Boulanger, F.

Author_Institution

CEA-LETI MINATEC, Grenoble

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

In this paper, we present a semi-analytical model tailored for nitride Charge-Trap TriGate (CT-3G) non-volatile memories under uniform stress: Fowler-Nordheim (FN) program (P) and erase (E) performances are reproduced. This model presents innovations in the tunnelling current calculation at corners through the Hankel function formalism. The validation of the model is operated through extensive comparisons with experimental data obtained on ultra-scaled devices with different aspect ratios and gate stacks. Scaling opportunities of such kind of 3D devices are deeply discussed.

Keywords

Hankel transforms; NAND circuits; flash memories; nitrogen compounds; Hankel function formalism; NAND Flash memories; nitride charge-trap trigate; tunnelling current calculation; ultra-scaled 3D nitride-trapping nonvolatile memories; ultra-scaled devices; Dielectrics; Geometry; Hafnium oxide; Nonvolatile memory; SONOS devices; Stress; Technological innovation; Tin; Transmission line matrix methods; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796750

Filename

4796750