Oxide-based RRAM switching mechanism: A new ion-transport-recombination model

Author

Gao, B. ; Yu, S. ; Xu, N. ; Liu, L.F. ; Sun, B. ; Liu, X.Y. ; Han, R.Q. ; Kang, J.F. ; Yu, B. ; Wang, Y.Y.

Author_Institution

Peking Univ.&Key Lab. of Microelectron. Devices & Circuits, Beijing

fYear

2008

fDate

15-17 Dec. 2008

Firstpage

1

Lastpage

4

Abstract

This paper presents a unified physical model to elucidate the resistive switching behavior of metal-oxide-based resistive random access memory (RRAM) devices using the ion-transport-recombination model. In this model, the rupture of conductive filaments is caused by recombination of oxygen ions and electron-low-occupied oxygen vacancies. The transport equations of interstitial oxygen ions in the oxide matrix are introduced to quantitatively investigate the reset speed and other properties such as uniformity, endurance, and reset current. The proposed mechanism was verified by experiments.

Keywords

ion recombination; random-access storage; transport processes; conductive filament rupture; electron-low-occupied oxygen vacancies; ion-transport-recombination model; oxide matrix; oxide-based RRAM switching mechanism; oxygen ions; resistive random access memory devices; transport equations; Bismuth; Boundary conditions; Electrodes; Electrons; Equations; Low voltage; Microelectronics; Random access memory; Scalability; Spontaneous emission;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2008. IEDM 2008. IEEE International

Conference_Location

San Francisco, CA

ISSN

8164-2284

Print_ISBN

978-1-4244-2377-4

Electronic_ISBN

8164-2284

Type

conf

DOI

10.1109/IEDM.2008.4796751

Filename

4796751