DocumentCode :
2930805
Title :
Comprehensive performance assessment of scaled (110) CMOSFETs based on understanding of STI stress effects and velocity saturation
Author :
Saitoh, Masumi ; Yasutake, Nobuaki ; Nakabayashi, Yukio ; Numata, Toshinori ; Uchida, Ken
Author_Institution :
Corp. R&D Center, Adv. LSI Technol. Lab., Toshiba Corp., Kawasaki
fYear :
2008
fDate :
15-17 Dec. 2008
Firstpage :
1
Lastpage :
4
Abstract :
We present the systematic study on dominant factors of the performance of scaled (110) n/pFETs. STI stress effects and velocity saturation phenomena in narrow and short (110) devices are investigated for the first time. Idsat of scaled (110) nFETs approaches (100) nFETs as a result of mu increase due to transverse compressive stress from STI in (110) nFETs and strong velocity saturation in (100) nFETs. Meanwhile, Idsat of scaled (110) pFETs are still superior to (100) pFETs due to high mu of (110) pFETs and weaker velocity saturation than nFETs as long as Rsd of (110) pFETs is well suppressed. As a result, scaled (110) CMOS shows excellent performance even without intentional stressors.
Keywords :
CMOS integrated circuits; MOSFET; isolation technology; silicon; CMOSFET; STI stress effects; Si (110); shallow trench isolation; velocity saturation; CMOS technology; CMOSFETs; Capacitive sensors; Compressive stress; Degradation; FETs; Laboratories; Large scale integration; MOSFETs; Research and development;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
ISSN :
8164-2284
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
Type :
conf
DOI :
10.1109/IEDM.2008.4796754
Filename :
4796754
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2930805
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