Novel 36 GHz GaAs frequency doublers using (M)MIC coplanar technology

Author

Tuko, M.A. ; Wolff, I.

Author_Institution

Dept. of Electr. Eng., Duisburg Univ., Germany

fYear

1992

fDate

1-5 June 1992

Firstpage

1167

Abstract

The design and performance of single-device and balanced versions of (M)MIC (microwave and monolithic microwave integrated circuit) GaAs FET frequency doublers from 18 GHz to 36 GHz, fabricated in purely CPW techniques, are presented. Coplanar discontinuities which are usually neglected are taken into consideration in the analysis and design. Spiral inductors and their associated parasitic capacitances are used for impedance matching and phase shifting purposes. Simulation and measurement results are in good agreement. The investigated doublers have a minimum conversion loss of 7 dB.<>

Keywords

III-V semiconductors; MMIC; field effect integrated circuits; frequency multipliers; gallium arsenide; hybrid integrated circuits; microwave integrated circuits; 18 to 36 GHz; 7 dB; CPW techniques; FET; GaAs; balanced versions; coplanar technology; discontinuities; frequency doublers; impedance matching; minimum conversion loss; monolithic microwave integrated circuit; parasitic capacitances; phase shifting; single device version; spiral inductors; Coplanar waveguides; FET integrated circuits; Frequency; Gallium arsenide; MMICs; Microwave FET integrated circuits; Microwave FETs; Microwave integrated circuits; Microwave theory and techniques; Monolithic integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1992., IEEE MTT-S International

Conference_Location

Albuquerque, NM, USA

ISSN

0149-645X

Print_ISBN

0-7803-0611-2

Type

conf

DOI

10.1109/MWSYM.1992.188204

Filename

188204