DocumentCode :
2930858
Title :
On the difference of temperature dependence of metal gate and poly gate SOI MOSFET threshold voltages
Author :
Han, Shu-Jen ; Wang, Xinlin ; Chang, Paul ; Guo, Dechao ; Na, Myung-Hee ; Rim, Ken
Author_Institution :
IBM SRDC, Hopewell Junction, NY
fYear :
2008
fDate :
15-17 Dec. 2008
Firstpage :
1
Lastpage :
4
Abstract :
The temperature dependence of device performance is a critical factor that determines overall product power-performance. We show HKMG gate stacks drive significantly higher threshold temperature dependence over poly-Si/SiON. We further show that in SOI, the work-function engineering enabled by HKMG integration schemes can result in even higher Vt temperature sensitivity attributed to differences in floating body behavior. These combined effects, together with observed reduced mobility temperature sensitivity, result in higher drive current at elevated temperature. This is in contrast to poly-Si/SiON technologies where the low driven current, performance limiting corner is typically at high temperature.
Keywords :
MOSFET; silicon; silicon compounds; silicon-on-insulator; work function; HKMG gate stacks; MOSFET; Si-SiON; Threshold Voltages; floating body behavior; metal gate; mobility temperature sensitivity; poly gate; product power-performance; silicon-on-insulator; temperature dependence; work-function engineering; CMOS technology; Energy efficiency; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Power engineering and energy; Silicon on insulator technology; Temperature dependence; Temperature sensors; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 2008. IEDM 2008. IEEE International
Conference_Location :
San Francisco, CA
ISSN :
8164-2284
Print_ISBN :
978-1-4244-2377-4
Electronic_ISBN :
8164-2284
Type :
conf
DOI :
10.1109/IEDM.2008.4796757
Filename :
4796757
Link To Document :
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