DocumentCode
2930862
Title
High voltage IGBT switch with capability of pulse width control
Author
Khomich, V.Yu. ; Malashin, M.V. ; Moshkunov, S.I. ; Rebrov, I.E. ; Shershunova, E.A.
Author_Institution
Inst. for Electrophys. & Electr. Power, St. Petersburg, Russia
fYear
2012
fDate
20-22 June 2012
Firstpage
1512
Lastpage
1514
Abstract
High voltage switch unit on a base of isolated gate bipolar transistors (IGBT) with operating voltage of 4.5 kV and capability of pulse width control is developed and investigated. The start-stop circuit of IGBT gates control lets the switch to be open for near unlimited periods of time up to be continually open at constant nanosecond delay time.
Keywords
power semiconductor switches; constant nanosecond delay time; high-voltage IGBT switch; isolated gate bipolar transistors; pulsewidth control capability; start-stop circuit; voltage 4.5 kV; Insulated gate bipolar transistors; Logic gates; Solids; Switches; Switching circuits; Voltage control; IGBT; high voltage; microsecond pulse; solid state switch;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics, Electrical Drives, Automation and Motion (SPEEDAM), 2012 International Symposium on
Conference_Location
Sorrento
Print_ISBN
978-1-4673-1299-8
Type
conf
DOI
10.1109/SPEEDAM.2012.6264541
Filename
6264541
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