Title :
High voltage IGBT switch with capability of pulse width control
Author :
Khomich, V.Yu. ; Malashin, M.V. ; Moshkunov, S.I. ; Rebrov, I.E. ; Shershunova, E.A.
Author_Institution :
Inst. for Electrophys. & Electr. Power, St. Petersburg, Russia
Abstract :
High voltage switch unit on a base of isolated gate bipolar transistors (IGBT) with operating voltage of 4.5 kV and capability of pulse width control is developed and investigated. The start-stop circuit of IGBT gates control lets the switch to be open for near unlimited periods of time up to be continually open at constant nanosecond delay time.
Keywords :
power semiconductor switches; constant nanosecond delay time; high-voltage IGBT switch; isolated gate bipolar transistors; pulsewidth control capability; start-stop circuit; voltage 4.5 kV; Insulated gate bipolar transistors; Logic gates; Solids; Switches; Switching circuits; Voltage control; IGBT; high voltage; microsecond pulse; solid state switch;
Conference_Titel :
Power Electronics, Electrical Drives, Automation and Motion (SPEEDAM), 2012 International Symposium on
Conference_Location :
Sorrento
Print_ISBN :
978-1-4673-1299-8
DOI :
10.1109/SPEEDAM.2012.6264541
