DocumentCode :
2931036
Title :
High voltage high current semiconductor devices and its new application-future power electronics possibilities for social infrastructure
Author :
Ohashi, Hiromichi
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
fYear :
2011
fDate :
23-27 Oct. 2011
Firstpage :
408
Lastpage :
411
Abstract :
Effective and efficient use of electrical power will become more important for coming highly electrified society. In the highly electrified society, power electronics will become essential means for processing electrical power effectively. Power semiconductor devices (power devices) are key components of power electronics as one of typical switching technologies in electrical engineering. Power device history and future advanced power devices are discussed focusing on high voltage and high current power devices.
Keywords :
electrical engineering; history; power semiconductor devices; switching convertors; electrical engineering; electrical power; high voltage high current semiconductor devices; power device history; power electronics; power semiconductor devices; social infrastructure; switching technologies; Diamond-like carbon; HVDC transmission; Insulated gate bipolar transistors; Next generation networking; Silicon; Silicon carbide; Electrified society; Power device; Power electronics; Wide band-gap semiconductor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electric Power Equipment - Switching Technology (ICEPE-ST), 2011 1st International Conference on
Conference_Location :
Xi´an
Print_ISBN :
978-1-4577-1273-9
Type :
conf
DOI :
10.1109/ICEPE-ST.2011.6123019
Filename :
6123019
Link To Document :
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